6H N Type SiC
Model NO.:intanetcms000042FEATURE
SILICON CARBIDE MATERIAL PROPERTIES | ||
Polytype | Single Crystal 4H | Single Crystal 6H |
Lattice Parameters | a=3.076 Å | a=3.073 Å |
c=10.053 Å | c=15.117 Å | |
Stacking Sequence | ABCB | ABCACB |
Band-gap | 3.26 eV | 3.03 eV |
Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
Refraction Index | no = 2.719 | no = 2.707 |
ne = 2.777 | ne = 2.755 | |
Dielectric Constant | 9.6 | 9.66 |
Thermal Conductivity | 490 W/mK | 490 W/mK |
Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
Mohs Hardness | ~9 | ~9 |
6H SIC, N-TYPE, 2″WAFER SPECIFICATION | ||
SUBSTRATE PROPERTY | S6H-51-N-PWAM-250 S6H-51-N-PWAM-330 S6H-51-N-PWAM-430 | |
Description | A/B Production Grade C/D Research Grade D Dummy Grade 6H SiC Substrate | |
Polytype | 6H | |
Diameter | (50.8 ± 0.38) mm | |
Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm | |
Carrier Type | n-type | |
Dopant | Nitrogen | |
Resistivity (RT) | 0.02 ~ 0.1 Ω·cm | |
Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) | |
FWHM | A<30 arcsec B/C/D <50 arcsec | |
Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 | |
Surface Orientation | ||
On axis | <0001>± 0.5° | |
Off axis | 3.5° toward <11-20>± 0.5° | |
Primary flat orientation | Parallel {1-100} ± 5° | |
Primary flat length | 16.00 ± 1.70 mm | |
Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° | |
C-face:90° ccw. from orientation flat ± 5° | ||
Secondary flat length | 8.00 ± 1.70 mm | |
Surface Finish | Single or double face polished | |
Packaging | Single wafer box or multi wafer box | |
Usable area | ≥ 90 % |
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