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Home > News > Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes
Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes

 

Highlights

 

 

We build a analytical models for calculating Ron and BV of 4H-SiC FJ_SBD.

 

The models can be used to analyse the effect of FJ parameters on Ron and BV.

 

The BFOM optimizing process can be finished easily and effectively by our models.

 


The analytical models of on-resistance and reverse breakdown voltage for 4H-SiC floating junction SBD are presented with the analysis of the transport path of the carriers and electric field distribution in the drift region. The calculation results from the analytical models well agree with the simulation results. The effects of the key structure parameters on specific on-resistance and breakdown voltage are described respectively by analytical models. Moreover, the relationship between BFOM and parameters of floating junction are investigated. It is proved that the analytical models are more convenient for the design of the floating junction SBDs.

Keywords

 

  • 4H-SiC
  • Floating junction SBD
  • Specific on-resistance
  • Breakdown voltage
  • Analytical model
 

Source:Sciencedirect

 

 

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