Company Name: Xiamen Powerway Advanced Material Co., Ltd
Tel: +86-592-5601404
Fax: +86-592-5745822
E-Mail: sic@powerwaywafer.com

Address: #3007-3008, No.89, Anling,Huli Developing Zone, Xiamen,China

4H N Type SiC

Model NO.:intanetcms000043
4H N Type SiC
FEATURE

PAM-XIAMEN offers 4H N Type silicon carbide wafers.

SILICON CARBIDE MATERIAL PROPERTIES
 Polytype Single Crystal 4H Single Crystal 6H
Lattice Parameters  a=3.076 Å  a=3.073 Å 
c=10.053 Å  c=15.117 Å 
Stacking Sequence  ABCB  ABCACB 
Band-gap  3.26 eV  3.03 eV 
Density  3.21 · 103 kg/m3  3.21 · 103 kg/m3 
Therm. Expansion Coefficient  4-5×10-6/K  4-5×10-6/K 
Refraction Index  no = 2.719  no = 2.707 
ne = 2.777  ne = 2.755 
Dielectric Constant  9.6 9.66
Thermal Conductivity  490 W/mK 490 W/mK
Break-Down Electrical Field  2-4 · 108 V/m 2-4 · 108 V/m
Saturation Drift Velocity  2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility  800 cm2/V·S  400 cm2/V·S 
hole Mobility  115 cm2/V·S  90 cm2/V·S 
Mohs Hardness  ~9 ~9 
4H N-TYPE SIC, 2″WAFER SPECIFICATION 
SUBSTRATE PROPERTY S4H-51-N-PWAM-250 S4H-51-N-PWAM-330 S4H-51-N-PWAM-430
Description A/B Production Grade C/D Research Grade D Dummy Grade   4H SiC Substrate
Polytype  4H 
Diameter  (50.8 ± 0.38) mm 
Thickness  (250 ± 25) μm                     (330 ± 25) μm                (430 ± 25) μm
Carrier Type  n-type 
Dopant  Nitrogen 
Resistivity (RT)  A/B:0.012 - 0.028 Ω·cm;C:0.012 - 0.1 Ω·cm;D:0.02 - 0.3 Ω·cm 
Surface Roughness  < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM  A<30 arcsec                   B/C/D <50 arcsec  
Micropipe Density  A+≤1cm-2 A≤10cm-2   B≤30cm-2 C≤50cm-2 D≤100cm-2
Surface Orientation 
On axis  <0001>± 0.5° 
Off axis  4°or 8° toward <11-20>± 0.5°
Primary flat orientation  Parallel {1-100} ± 5° 
Primary flat length  (16 ± 1.7) mm 
Secondary flat orientation  Si-face:90° cw. from orientation flat ± 5° 
C-face:90° ccw. from orientation flat ± 5° 
Secondary flat length  (8 ± 1.7) mm 
Surface Finish  Single or double face polished 
Packaging  Single wafer box or multi wafer box 
Usable area  A:≥ 90 %;B:≥ 85 %;C:≥ 80 %;D:≥ 70 % 
Edge exclusion  1 mm 
4H SIC,N-TYPE , 3WAFER SPECIFICATION 
SUBSTRATE PROPERTY S4H-76-N-PWAM-330               S4H-76-N-PWAM-430
Description A/B Production Grade C/D Research Grade D Dummy Grade   4H SiC Substrate
Polytype  4H 
Diameter  (76.2 ± 0.38) mm 
Thickness       (350 ± 25) μm                            (430 ± 25) μm
Carrier Type  n-type 
Dopant  Nitrogen 
Resistivity (RT)  0.015 - 0.028Ω·cm 
Surface Roughness  < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) 
FWHM  A<30 arcsec                   B/C/D <50 arcsec  
Micropipe Density  A+≤1cm-2 A≤10cm-2   B≤30cm-2 C≤50cm-2 D≤100cm-2
TTV/Bow /Warp <25μm
Surface Orientation   
On axis  <0001>± 0.5° 
Off axis  4°or 8° toward <11-20>± 0.5°
Primary flat orientation  <11-20>±5.0°
Primary flat length  22.22 mm±3.17mm
0.875″±0.125″
Secondary flat orientation  Si-face:90° cw. from orientation flat ± 5° 
C-face:90° ccw. from orientation flat ± 5° 
Secondary flat length  11.00 ± 1.70 mm 
Surface Finish Single or double face polished 
Packaging  Single wafer box or multi wafer box 
Scratch None
Usable area  ≥ 90 % 
Edge exclusion  2mm 
4H SIC,N-TYPE , 4WAFER SPECIFICATION 
SUBSTRATE PROPERTY S4H-76-N-PWAM-330               S4H-76-N-PWAM-430
Description A/B Production Grade C/D Research Grade D Dummy Grade   4H SiC Substrate
Polytype  4H 
Diameter  (76.2 ± 0.38) mm 
Thickness       (350 ± 25) μm                            (430 ± 25) μm
Carrier Type  n-type 
Dopant  Nitrogen 
Resistivity (RT)  0.015 - 0.028Ω·cm 
Surface Roughness  < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) 
FWHM  A<30 arcsec                   B/C/D <50 arcsec  
Micropipe Density  A+≤1cm-2 A≤10cm-2   B≤30cm-2 C≤50cm-2 D≤100cm-2
TTV/Bow /Warp <45μm
Surface Orientation   
On axis  <0001>± 0.5° 
Off axis  4°or 8° toward <11-20>± 0.5°
Primary flat orientation  <11-20>±5.0°
Primary flat length  32.50 mm±2.00mm
 
Secondary flat orientation  Si-face:90° cw. from orientation flat ± 5° 
C-face:90° ccw. from orientation flat ± 5° 
Secondary flat length  18.00 ± 2.00 mm 
Surface Finish Single or double face polished 
Packaging  Single wafer box or multi wafer box 
Scratch None
Usable area  ≥ 90 % 
Edge exclusion  2mm 
4H N-type SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION : Thickness:330μm/430μm
4H N-type SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION: Thickness:330μm/430μm
a-plane SiC Wafer, size: 40mm*10mm,30mm*10mm,20mm*10mm,10mm*10mm,specs below: 
4H N type Thickness:330μm/430μm or custom


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