4H N Type SiC
Model NO.:intanetcms000043
FEATURE
PAM-XIAMEN offers 4H N Type silicon carbide wafers.
| SILICON CARBIDE MATERIAL PROPERTIES | ||
| Polytype | Single Crystal 4H | Single Crystal 6H |
| Lattice Parameters | a=3.076 Å | a=3.073 Å |
| c=10.053 Å | c=15.117 Å | |
| Stacking Sequence | ABCB | ABCACB |
| Band-gap | 3.26 eV | 3.03 eV |
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index | no = 2.719 | no = 2.707 |
| ne = 2.777 | ne = 2.755 | |
| Dielectric Constant | 9.6 | 9.66 |
| Thermal Conductivity | 490 W/mK | 490 W/mK |
| Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
| Mohs Hardness | ~9 | ~9 |
| 4H N-TYPE SIC, 2″WAFER SPECIFICATION | ||
| SUBSTRATE PROPERTY | S4H-51-N-PWAM-250 S4H-51-N-PWAM-330 S4H-51-N-PWAM-430 | |
| Description | A/B Production Grade C/D Research Grade D Dummy Grade 4H SiC Substrate | |
| Polytype | 4H | |
| Diameter | (50.8 ± 0.38) mm | |
| Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm | |
| Carrier Type | n-type | |
| Dopant | Nitrogen | |
| Resistivity (RT) | A/B:0.012 - 0.028 Ω·cm;C:0.012 - 0.1 Ω·cm;D:0.02 - 0.3 Ω·cm | |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) | |
| FWHM | A<30 arcsec B/C/D <50 arcsec | |
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 | |
| Surface Orientation | ||
| On axis | <0001>± 0.5° | |
| Off axis | 4°or 8° toward <11-20>± 0.5° | |
| Primary flat orientation | Parallel {1-100} ± 5° | |
| Primary flat length | (16 ± 1.7) mm | |
| Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° | |
| C-face:90° ccw. from orientation flat ± 5° | ||
| Secondary flat length | (8 ± 1.7) mm | |
| Surface Finish | Single or double face polished | |
| Packaging | Single wafer box or multi wafer box | |
| Usable area | A:≥ 90 %;B:≥ 85 %;C:≥ 80 %;D:≥ 70 % | |
| Edge exclusion | 1 mm | |
| 4H SIC,N-TYPE , 3″WAFER SPECIFICATION | ||
| SUBSTRATE PROPERTY | S4H-76-N-PWAM-330 S4H-76-N-PWAM-430 | |
| Description | A/B Production Grade C/D Research Grade D Dummy Grade 4H SiC Substrate | |
| Polytype | 4H | |
| Diameter | (76.2 ± 0.38) mm | |
| Thickness | (350 ± 25) μm (430 ± 25) μm | |
| Carrier Type | n-type | |
| Dopant | Nitrogen | |
| Resistivity (RT) | 0.015 - 0.028Ω·cm | |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) | |
| FWHM | A<30 arcsec B/C/D <50 arcsec | |
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 | |
| TTV/Bow /Warp | ＜25μm | |
| Surface Orientation | ||
| On axis | <0001>± 0.5° | |
| Off axis | 4°or 8° toward <11-20>± 0.5° | |
| Primary flat orientation | <11-20>±5.0° | |
| Primary flat length | 22.22 mm±3.17mm 0.875″±0.125″ |
|
| Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° | |
| C-face:90° ccw. from orientation flat ± 5° | ||
| Secondary flat length | 11.00 ± 1.70 mm | |
| Surface Finish | Single or double face polished | |
| Packaging | Single wafer box or multi wafer box | |
| Scratch | None | |
| Usable area | ≥ 90 % | |
| Edge exclusion | 2mm | |
| 4H SIC,N-TYPE , 4″WAFER SPECIFICATION | ||
| SUBSTRATE PROPERTY | S4H-76-N-PWAM-330 S4H-76-N-PWAM-430 | |
| Description | A/B Production Grade C/D Research Grade D Dummy Grade 4H SiC Substrate | |
| Polytype | 4H | |
| Diameter | (76.2 ± 0.38) mm | |
| Thickness | (350 ± 25) μm (430 ± 25) μm | |
| Carrier Type | n-type | |
| Dopant | Nitrogen | |
| Resistivity (RT) | 0.015 - 0.028Ω·cm | |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) | |
| FWHM | A<30 arcsec B/C/D <50 arcsec | |
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 | |
| TTV/Bow /Warp | ＜45μm | |
| Surface Orientation | ||
| On axis | <0001>± 0.5° | |
| Off axis | 4°or 8° toward <11-20>± 0.5° | |
| Primary flat orientation | <11-20>±5.0° | |
| Primary flat length | 32.50 mm±2.00mm |
|
| Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° | |
| C-face:90° ccw. from orientation flat ± 5° | ||
| Secondary flat length | 18.00 ± 2.00 mm | |
| Surface Finish | Single or double face polished | |
| Packaging | Single wafer box or multi wafer box | |
| Scratch | None | |
| Usable area | ≥ 90 % | |
| Edge exclusion | 2mm | |
| 4H N-type SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION : Thickness:330μm/430μm | ||
| 4H N-type SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION: Thickness:330μm/430μm | ||
| a-plane SiC Wafer, size: 40mm*10mm,30mm*10mm,20mm*10mm,10mm*10mm,specs below: | ||
| 4H N type | Thickness:330μm/430μm or custom | |
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