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  • Silicon Carbide Substrate...
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Home > Knowledge > 2.Definition of Dimensional Properties,Terminology and Methods of Silicon Carbide Wafer
  • 2-1.Wafer Diameter
  • 2-2.Wafer Thickness, Center Point
  • 2-3.Wafer Flat Length
  • 2-4.Wafer Surface Orientation
  • 2-5.Misorientation
  • 2-6.Wafer Primary Flat
  • 2-7.Primary Flat Orientation
  • 2-8.Secondary Flat Orientation
  • 2-9.(Area) Wafer Contamination
  • 2-10.Cracks
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