XIAMEN POWERWAY ADVANCED MATERIAL
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Silicon Carbide Substrate...
6H Silicon Carbide
4H Silicon Carbide
N Type Silicon Carbide
Semi-insulating Silicon Carbide
As Cut Wafer
Lapping Wafer
Polishing Wafer
Transparent SiC
Dummy Wafer
Reclaim Wafer
SiC Epitaxial Wafers
Wafer Reclaim Service
Wafer Planarization
Wafer Reclaim
Company Name： XIAMEN POWERWAY ADVANCED MATERIAL
Tel： +86-592-5601404
Fax： +86-592-5563272
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2.Definition of Dimensional Properties,Terminology and Methods of Silicon Carbide Wafer
2-1.Wafer Diameter
2-2.Wafer Thickness, Center Point
2-3.Wafer Flat Length
2-4.Wafer Surface Orientation
2-5.Misorientation
2-6.Wafer Primary Flat
2-7.Primary Flat Orientation
2-8.Secondary Flat Orientation
2-9.(Area) Wafer Contamination
2-10.Cracks
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