2.Definition of Dimensional Properties,Terminology and Methods of Silicon Carbide Wafer_Knowledge

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Home > Knowledge > 2.Definition of Dimensional Properties,Terminology and Methods of Silicon Carbide Wafer

2-1.Wafer Diameter
2-2.Wafer Thickness, Center Point
2-3.Wafer Flat Length
2-4.Wafer Surface Orientation
2-5.Misorientation
2-6.Wafer Primary Flat
2-7.Primary Flat Orientation
2-8.Secondary Flat Orientation
2-9.(Area) Wafer Contamination
2-10.Cracks