XIAMEN POWERWAY ADVANCED MATERIAL
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Silicon Carbide Substrate...
6H Silicon Carbide
4H Silicon Carbide
N Type Silicon Carbide
Semi-insulating Silicon Carbide
As Cut Wafer
Lapping Wafer
Polishing Wafer
Transparent SiC
Dummy Wafer
Reclaim Wafer
SiC Epitaxial Wafers
Wafer Reclaim Service
Wafer Planarization
Wafer Reclaim
Company Name: XIAMEN POWERWAY ADVANCED MATERIAL
Tel: +86-592-5601404
Fax: +86-592-5563272
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2.Definition of Dimensional Properties,Terminology and Methods of Silicon Carbide Wafer
2-1.Wafer Diameter
2-2.Wafer Thickness, Center Point
2-3.Wafer Flat Length
2-4.Wafer Surface Orientation
2-5.Misorientation
2-6.Wafer Primary Flat
2-7.Primary Flat Orientation
2-8.Secondary Flat Orientation
2-9.(Area) Wafer Contamination
2-10.Cracks
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