XIAMEN POWERWAY ADVANCED MATERIAL
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Silicon Carbide Substrate...
6H Silicon Carbide
4H Silicon Carbide
N Type Silicon Carbide
Semi-insulating Silicon Carbide
As Cut Wafer
Lapping Wafer
Polishing Wafer
Transparent SiC
Dummy Wafer
Reclaim Wafer
SiC Epitaxial Wafers
Wafer Reclaim Service
Wafer Planarization
Wafer Reclaim
Company Name: XIAMEN POWERWAY ADVANCED MATERIAL
Tel: +86-592-5601404
Fax: +86-592-5563272
E-Mail:
sic@powerwaywafer.com
Address: #506B, Henghui Business Center,No.77,Lingxia Nan Road, High Technology Zone, Huli, Xiamen,361006
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2.Definition of Dimensional Properties,Terminology and Methods of Silicon Carbide Wafer
2-11.Edge Chips
2-12.Edge Exclusion
2-13.Hex Plate
2-14.Masking Defects
2-15.Orange Peel
2-16.Pits
2-17.Polytypes
2-18.Grain boundaries
2-19.Scratches
2-20.Linear Crystallographic Defects
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